2018.12.06 SiC Power Device
In this article, we introduce support tools for design and evaluation using full-SiC modules.
Full-SiC Module Loss Simulator
A Loss simulator that can be used in the study and evaluation of full-SiC modules is offered at no cost. Simply by selecting a full-SiC module and setting the input conditions, the losses and temperatures of the transistors and diodes within the module can be simulated.
This is an example of an input screen.
G is the power factor, H is the modulation ratio, K is the heat sink temperature, and other quantities are as indicated. Next we show an output screen.
In A, the loss for each transistor in the module, P-Tr, the SW loss and DC loss making up each P-Tr loss, and the SW(on) and SW(off) losses that make up each SW loss are shown. At the same time, the difference between the junction temperature and the case temperature, ΔTj-c(Ave), and the junction temperature Tj(Ave) are also calculated. B similarly presents simulation results for diodes. C indicates the overall loss for the module. These results can be stored in CSV format.
The full-SiC module loss simulator can be downloaded here.
Other Support Tools
Other related support tools are available as well. For details, please follow these links.
・A full-SiC module loss simulator and other support tools are available.
・The support tools are useful for selection and initial studies of full-SiC modules.