2023.01.25
Points of this article
・Power devices are applied selectively according to their features and characteristics.
・In addition to discrete components, modules are also available. They are chosen according to the combination of their range of application and the requirements of the particular application.
Power devices such as IGBTs and MOSFETs are applied selectively according to their features and characteristics. In addition to power devices used as single elements (discrete semiconductors), they are also widely used in modules, where they are combined with other basic components. Below, the ranges of application of IGBTs, Si MOSFETs, SiC MOSFETs, and bipolar transistors are explained, in terms of their output capacities and operating (switching) frequencies. We also classify devices into discrete components and modules.
Graphic Representation of the Ranges of Application of Power Devices
in Terms of Output Capacity and Operating Frequency
Discrete IGBTs cover the range from 1 to 50 or 60 kHz and outputs extending up to a little over 1 kVA. Modules using IGBTs have operating frequencies in the same range but with output capacities that can exceed 100 MVA, depending on how the IGBTs are combined with other components. As the output capacity increases, the operating frequency declines due to switching losses and other limitations.
The above should impart a general understanding of the characteristics and ranges of application of different power devices.
Downloadable materials, including lecture materials from ROHM-sponsored seminars and a selection guide for DC-DC converters, are now available.
Downloadable materials, including lecture materials from ROHM-sponsored seminars and a selection guide for DC-DC converters, are now available.