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SiC Schottky Barrier Diodes
2022.01.01
SiC is a next generation low-loss semiconductor to reduce switching losses and to have better performance under high temperature condition, realizing smaller, lower power and higher efficiency power devices than Si. SiC Schottky barrier diodes can reduce switching losses and perform fast switching with actual results in PFC of high speed switching power supply circuits.
- https://www.rohm.com/products/sic-power-devices/sic-schottky-barrier-diodes
【Download Documents】Silicon Carbide Power Devices Understanding & Application Examples Utilizing the Merits
ROHM’s seminar materials provided at the seminar venue. Basic properties of silicon carbide(SiC) which has the potential for minimizing the size of power products, reducing power consumption, and enhancing efficiency, how to use SiC diodes and SiC MOSFETs, and application examples utilizing the merits are described.
Download Technical Documents
Silicon Carbide Power Devices Understanding & Application Examples Utilizing the Merits
ROHM’s seminar materials provided at the seminar venue. Basic properties of silicon carbide(SiC) which has the potential for minimizing the size of power products, reducing power consumption, and enhancing efficiency, how to use SiC diodes and SiC MOSFETs, and application examples utilizing the merits are described.