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SiC Power Device｜Product Information
SiC Power Modules
2022.01.01
SiC is a next generation low-loss semiconductor to reduce switching losses and to have better performance under high temperature condition, realizing smaller, lower power and higher efficiency power devices than Si. SiC Power Modules can drastically reduce power losses for IGBT modules because of lower switching losses, and excel under high switching frequency condition.
- https://www.rohm.com/products/sic-power-devices/sic-power-module
【Download Documents】Silicon Carbide Power Devices Understanding & Application Examples Utilizing the Merits
ROHM’s seminar materials provided at the seminar venue. Basic properties of silicon carbide(SiC) which has the potential for minimizing the size of power products, reducing power consumption, and enhancing efficiency, how to use SiC diodes and SiC MOSFETs, and application examples utilizing the merits are described.
Download Technical Documents
Silicon Carbide Power Devices Understanding & Application Examples Utilizing the Merits
ROHM’s seminar materials provided at the seminar venue. Basic properties of silicon carbide(SiC) which has the potential for minimizing the size of power products, reducing power consumption, and enhancing efficiency, how to use SiC diodes and SiC MOSFETs, and application examples utilizing the merits are described.