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SiC Power Device｜Product Information
SiC MOSFET Bare Die
2022.01.01
SiC MOSFETs can reduce switching losses by fast switching due to theoretically no tail-current at switching operation. Low Ron with smaller die size, and low capacitance and gate-charge are achieved.
- https://www.rohm.com/products/sic-power-devices/sic-mosfet-bare-die
【Download Documents】Silicon Carbide Power Devices Understanding & Application Examples Utilizing the Merits
ROHM’s seminar materials provided at the seminar venue. Basic properties of silicon carbide(SiC) which has the potential for minimizing the size of power products, reducing power consumption, and enhancing efficiency, how to use SiC diodes and SiC MOSFETs, and application examples utilizing the merits are described.
Download Technical Documents
Silicon Carbide Power Devices Understanding & Application Examples Utilizing the Merits
ROHM’s seminar materials provided at the seminar venue. Basic properties of silicon carbide(SiC) which has the potential for minimizing the size of power products, reducing power consumption, and enhancing efficiency, how to use SiC diodes and SiC MOSFETs, and application examples utilizing the merits are described.