Key Words : IGBT

As part of our examination of " SiC MOSFET: Behavior of Gate-Source Voltage in Bridge Configuration"...

As the first article in this series on basic knowledge and applications of SiC power devices, we beg...

In this article, we introduce support tools for design and evaluation using full-SiC modules. Full-S...

This final section ends by summarizing the key points of the physical properties of SiC, SiC-SBDs (S...

This concludes the basic edition of Si power devices. As Si-based power devices, we have explained t...

In this article, as important points in utilizing full-SiC modules, in addition to the snubber capac...

In the previous article we presented an example of efficiency improvement and noise reduction in an ...

In this article, we explain snubber capacitors used with full-SiC power modules. Snubber capacitors ...

From this article, we present examples of improvements to efficiency and other parameters in actual ...

In succession to the boundary current mode PFC example of the previous article, this time we present...