The PrestoMOS™ series of superjunction MOSFETs, developed independently by ROHM, use original ROHM lifetime control technology to achieve an industry-fastest* reverse recovery time (trr). These MOSFETs contribute to reducing power consumption during steady-state operation in air conditioners and inverter applications, and so are already highly evaluated as replacements for IGBTs. *According to a ROHM survey, as of March 15, 2019
The preexisting lineup has recently been expanded with the addition of 30 newly developed models, the R60xxJNx series, with the following features.
- ・The fastest reverse recovery time (trr) in the industry. Power dissipation under light loading are reduced by approx. 58% compared with IGBTs.
- ・A design that eliminates self-turn on, which is one cause of increased losses.
- ・Optimization of body diode characteristics, improved soft recovery index. Reduction of noise that may cause erroneous operation.
As a result of these features, application losses can be reduced, circuit optimization is simplified, and freedom of design is enhanced.
Industry-fastest Reverse Recovery Time (trr) Achieved; Power Dissipation Reduced Approx. 58% Under Light Loading Compared with IGBTs
Inverter circuits are used for motor driving in appliances such as air conditioners and refrigerators, and IGBTs have ordinarily been used as the switching elements. However, as part of demands in recent years for improved energy efficiency, reduction of power consumption during steady-state operation has become an issue. ROHM first placed its PrestoMOS™ power MOSFETs featuring industry-fastest reverse recovery characteristics on the market in 2012; these devices have received enthusiastic praise for their performance in reducing power consumption during steady-state operation.
Design Free of Self-turn On Causing Loss Increases
By optimizing the parasitic capacitance that is present in a MOSFET due to its structure, the rise in gate voltage during switching can be reduced by 20%. In addition, a design is adopted in which the MOSFET turn-on threshold voltage (Vth) is raised by a factor of about 1.5, so that self-turn on does not easily occur. The gate resistance, which is one factor causing losses, is optimized to enable loss reduction.
Improved Recovery Characteristic for Reduced Noise Leading to Malfunctions
In general, the recovery characteristic of the body diode of an SJ-MOSFET is a hard recovery characteristic. Through optimization of their structure, the R60xxJNx series of MOSFETs feature a 30% improvement in the soft recovery index over previous devices as well as reduced noise while maintaining the industry's fastest reverse recovery time (trr). As a result, noise optimization utilizing the gate resistance and other means during design time is facilitated.
The R60xxJNx series lineup is described below.
| Package | |||||
|---|---|---|---|---|---|
| TO-252 (DPAK) [SC-63] |
TO-263 (LPT(S) D2PAK) [SC-83] |
TO-220FM | TO-247 | ||
 |
 |
 |
 |
||
| Ron typ (mΩ) |
1100 |  R6004JND3 |
R6004JNJ |
R6004JNX |
|
| 720 | R6006JND3 |
R6006JNJ |
☆R6006JNX | ||
| 600 | R6007JND3 |
R6007JNJ |
R6007JNX |
||
| 450 | R6009JND3 |
R6009JNJ |
R6009JNX |
||
| 350 | R6012JNJ |
☆R6012JNX | |||
| 220 | R6018JNJ |
R6018JNX |
|||
| 180 | R6020JNJ |
R6020JNX |
R6020JNZ4 |
||
| 140 | R6025JNX |
R6025JNZ4 |
|||
| 110 | ☆R6030JNX | R6030JNZ4 |
|||
| 90 | R6042JNZ4 |
||||
| 64 | ☆R6050JNZ4 | ||||
| 45 | ☆R6070JNZ4 | ||||
☆In development
