Easily Attain Dramatic Compactness,
Energy Savings, Efficiency in Power Supplies for AC 400 V Industrial Equipment

Advantages of Using SiC MOSFETs

Compared with Si-MOSFETs, SiC MOSFETs offer such advantages as lower switching and conduction losses at high voltages, the ability to handle high power levels, and durability with respect to temperature changes. These are as was explained in "SiC Power Devices: Basic Knowledge" on Tech Web. In power conversion applications such as AC/DC converters and DC/DC converters, these advantages mean that higher power conversion efficiency, more compact heat-dissipating components, smaller inductor sizes through high-frequency operation, and other reductions in power consumption, number of components, and footprint, are made possible.

In particular, these advantages are driving adoption of SiC power semiconductors in industrial equipment that handles 400 V AC. In addition to main power supply circuits, higher efficiency and more compact design are also possible for auxiliary power supplies used in various control systems, where power consumption is regarded as an issue.

Features of BM2SCQ12xT-LBZ AC/DC converter ICs with Internal SiC MOSFETs

The BM2SCQ12xT-LBZ ICs adopt a dedicated package developed for an internal SiC MOSFET, and incorporates control circuitry optimized for auxiliary power supplies for industrial equipment, such as a gate drive circuit for driving the SiC MOSFET, as well as the 1700 V SiC MOSFET. Because of the following features, it is easy to achieve compactness, improved reliability, and reduced power consumption in AC 400 V industrial equipment.

1. Inclusion of up to 12 components and a heat sink in a single package, dramatically reducing the number of components and achieving compactness

2. Reduced number of development man-hours and malfunction rate, inclusion of necessary protection functions

By incorporating a conventional discrete component layout into a single package, development man-hours such as component and SiC MOSFET selection, evaluation, and design can be reduced, and a smaller number of components boosts reliability. Further, by using an internal SiC MOSFET, in addition to high-precision overheating protection, various other protection functions are provided, such as overload protection, overvoltage protection at power supply terminals, overcurrent protection, and secondary-side overvoltage protection.

3. SiC MOSFET performance leveraged for dramatic reduction of power consumption

＜Lineup＞

Part No.	Supply Voltage Range	Normal Operating Current	Burst Operating Current	Max. Operating Frequency	FB OLP	VCC OVP	Operating Temp. Range
BM2SCQ121T-LBZ	VCC: 15.0V ～ 27.5V DRAIN: 1700V (Max.)	2000μA (Typ.)	500μA (Typ.)	120kHz (Typ.)	Auto Restart	Latch	-40℃ ～ 105℃
BM2SCQ122T-LBZ					Latch	Latch
BM2SCQ123T-LBZ					Auto Restart	Auto Restart
BM2SCQ124T-LBZ					Latch	Auto Restart

These products can also be purchased from online vendors. An evaluation board will be sold starting in summer 2019.

A previously released controller IC without an internal SiC MOSFET, the BD7682FJ-LB, is also available. A design case study for this product is explained in "Design Example of Isolated Quasi-Resonant Converters Using SiC MOSFET” in Tech Web’s Basic Knowledge -- AC/DC Design series and should also be consulted.