Non-Isolated Gate Drivers and Power Devices

In addition to motor driver ICs, ROHM makes available non-isolated gate drivers suitable for motor driving, as well as such discrete power devices as IGBTs and power MOSFETs.

Highly Reliable Non-Isolated Gate Drivers Using a Latchup-Free SOI Process

ROHM’s non-isolated gate drivers are high-side/low-side gate drivers that use a bootstrapping design. High reliability is achieved by adopting a latch up-free SOI process. If latchup occurs, large currents flow, possibly culminating in destruction of the IC or power device. Latchup resistance can be improved through element layout and manufacturing processes; in ROHM’s SOI (Silicon On Insulator) process, high withstand voltage ratings are achieved through a complete dielectric isolation method relying on an SOI substrate, so that latchup is structurally prevented.

PrestoMOS^TM Super-Junction MOSFETs with Faster Reverse Recovery Times

In a comparison of PrestoMOS^TM MOSFETs with IGBTs, because loss voltages are lower in the low to intermediate power regimes, losses can be reduced (see the graph on the lower left). And in motor driver circuits, faster internal parasitic diodes can be utilized without using the external fast recovery diodes (FRDs) that are employed to reduce the commutation losses due to the regeneration currents of the generally-used MOSFETs and IGBTs. Compared with FRDs, the parasitic diode in a PrestoMOS^TM MOSFET has a lower VF, resulting in lower losses.