Semiconductor Memories｜Basic
SRAM ＜Semiconductor Device Principles＞
table of contents
Memory Cell Structure
- 6-Transistor Cell Configuration
- 4-Transistor Cell Configuration (High Resistive Load Cell Type)
Low Power Type to the left, High Density Type to the right.
Data Write Method (see diagram below)
In the Case of ‘1’:
- Word Line potential is High
- Assign a potential to the Bit Line (D=Low, D=High)
- The state of the flip-flop
- Word Line potential is Low
Data Read Method
In the Case of ‘1’:
- Word Line potential OFF
- Bit Line precharge (same potential as D, D)
- Word Line potential is High
- If the Bit Line is Low the conditions will be High
- Amplified by the sense amp
The state of ‘1’ to the left, The state of ‘0’ to the right. ‘0’, ‘1’ stored by the flip flop circuit
Semiconductor Memories
Basic
-
What is Semiconductor Memory?
- What is Semiconductor Memory?
- DRAM ＜Semiconductor Device Principles＞
- SRAM ＜Semiconductor Device Principles＞
- Mask ROM ＜Semiconductor Device Principles＞
- EEPROM ＜Semiconductor Device Principles＞
- Flash Memory ＜Semiconductor Device Principles＞
- Interface Selection
- Pin Layout and Functions
- Command Comparison
- Application Example: Configuring Multiple EEPROMs (I2C)
- Application Example: Configuring Multiple EEPROMs (SPI)
- Application Example: Configuring Multiple EEPROMs (Microwire)