Technical Information Site of Power Supply Design
Technical Information Site of Power Supply Design
ROHM product information for designing power supply.
Power Supply IC
Wide lineup of linear regulators to 900 kinds including general purpose 3-pin, low power, high current, and high voltage are available. These are ideal for mobile phones, automotive systems, consumer electronics, commercial products and industrial equipment.
Wide lineup of switching regulators (DC/DC converters) are available, which are back/boost/back-boost with/without internal MOSFET, from single output to multi-output system power supply. These contribute to improve efficiency of CPUs, FPGAs, portable devices, automotive equipment, consumer products and industrial products.
Integrated MOSFET types and controller types with functions for reducing power consumption at light load, various protections and noise reduction, making isolated converters smaller and higher efficiency, are available.
Power Devices
Power Schottky barrier diodes combine lower VF and IF with higher ESD rating, featuring low power consumption and high reliability for battery controlling, power supply and automotive with EV/HV applications.
Fast recovery diodes drastically to improve efficiency and power consumption of switching power supplies, providing optimum characteristics for DCM and BCM in PFC applications like lighting, air-conditioning, LCD-TV, industrial modules and etc.
ROHM's unique Supper Junction MOSFETs include higher switching speed and lower on-resistance to apply to wide range of applications. Automotive versions are compliant with AEC-Q101.
SiC is a next generation low-loss semiconductor to reduce switching losses and to have better performance under high temperature condition, realizing smaller, lower power and higher efficiency power devices than Si. SiC Schottky barrier diodes can reduce switching losses and perform fast switching with actual results in PFC of high speed switching power supply circuits.
SiC is a next generation low-loss semiconductor to reduce switching losses and to have better performance under high temperature condition, realizing smaller, lower power and higher efficiency power devices than Si. SiC MOSFETs can reduce switching losses by fast switching due to theoretically no tail-current at switching operation.
SiC is a next generation low-loss semiconductor to reduce switching losses and to have better performance under high temperature condition, realizing smaller, lower power and higher efficiency power devices than Si. SiC Power Modules can drastically reduce power losses for IGBT modules because of lower switching losses, and excel under high switching frequency condition.
SiC Schottky barrier diodes can reduce switching losses and perform fast switching with actual results in PFC of high speed switching power supply circuits.
SiC MOSFETs can reduce switching losses by fast switching due to theoretically no tail-current at switching operation. Low Ron with smaller die size, and low capacitance and gate-charge are achieved.
IGBTs are effective to improve efficiency and power consumption for wide range of high voltage and high current applications. Lower VCE(sat) and switching losses are achieved by the unique trench-gate and thin wafer technology.
IGBTs are effective to improve efficiency and power consumption for wide range of high voltage and high current applications. Ignition IGBTs achieved both low VCE(sat) and high avalanche rating, optimizing for automotive ignition applications with high reliability.
IGBT-IPM(Intelligent Power Module) is a module packing optimized gate driving circuits and protection functions in a case. It gives system efficiency improvement and design work reduction.
MOS-IPM(Intelligent Power Module) is a high efficient module using the unique PrestMOS. Comparing with IGBT products, it can dramatically reduce losses at constant operation of air-conditioning.