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SiC Power Device
SiC Power Device
Basic
Application
Product Information
FAQ
Basic
What are SiC Schottky barrier diodes? ? Introduction
Features of SiC SBDs and Comparison with Si Diodes
Reverse Recovery Characteristics of SiC-SBDs and Si-PNDs
Forward Voltages of SiC SBD and Si PND
xEvolution of SiC-SBDs
Advantages of using SiC-SBDs
Reliability Tests
What are SiC-MOSFETs? – SiC-MOSFET Features
What are SiC-MOSFETs? – Comparison of Power Transistor Structures and Features
What are SiC-MOSFETs? – Differences with Si-MOSFET
Differences with IGBTs
Body Diode Characteristics
Trench-structure SiC-MOSFETs and Actual Products
SiC Application Examples
Reliability of SiC-MOSFETs
What are Full-SiC Power Modules?
Switching Losses in Full-SiC Power Modules
Tips for Practical Use: Gate Driving–Part 1
Tips for Practical Use: Gate Driving–Part 2
Tips for Practical Use: Snubber Capacitors
Tips for Practical Use: The Effects of Specialized Gate Drivers and Snubber Modules
Summary
Introduction
What is silicon carbide?
Development Background and Advantages of SiC Power Devices
Application
Introduction
SiC MOSFET Bridge Configuration
SiC MOSFET Gate Driving Circuit and Turn-On/Turn-Off Operation
Currents and Voltages Occurring Due to Switching in Bridge Circuits
Behavior of the Gate-Source Voltage During Low-side Switch Turn-on
Behavior of the Gate-Source Voltage During Low-side Switch Turn-off
Summary
SiC MOSFETs: Method for Determining Losses from Switching Waveforms
SiC MOSFETs: Snubber Circuit Designs ーIntroductionー
Non-Discharge RCD Snubber Circuit Design
Surges Occurring between Drain and Source
Types and Selection of Snubber Circuits
C Snubber Circuit Design
RC Snubber Circuit Design
Discharge RCD Snubber Circuit Design
Non-Discharge RCD Snubber Circuit Design
Differences in Surge Occurrence Depending on Package
SiC MOSFETs: Snubber Circuit Designs ーSummaryー
Points to Note When Measuring SiC MOSFET Gate-Source Voltages: General Measurement Methods
Selection of Measurement Points
Method for Connecting a Probe
Place of Installation of Probe Heads
Points to be Noted for Bridge Configurations – Probe CMRR
Points to Note When Measuring SiC MOSFET Gate-Source Voltages-Summary-
Conventional MOSFET Driving Method
Packages Provided with Driver Source Terminals
Differences Made by and Benefits of a Driver Source Pin
Benefits of a Driver Source Terminal: Comparisons Using Double Pulse Tests
Behavior of Gate-Source Voltages when in a Bridge Configuration: Behavior at Turn-on
Behavior of Gate-Source Voltages when in a Bridge Configuration: Behavior at Turn-off
Points to be Noted Relating to Board Wiring Layout Key Points of This Article
Verification of Loss Reduction Using Latest-Generation SiC MOSFETs
About Surges in Gate-Source Voltages
Surge Suppression Circuits
Positive Voltage Surge Countermeasures
Negative Voltage Surge Countermeasures
Guidelines Relating to PCB Layout for Surge Suppression Circuits
SiC MOSFETs: Methods for Suppressing Gate-Source Voltage Surges ー Summary ー
Product Information
SiC Schottky Barrier Diodes
SiC MOSFET
SiC Power Modules
SiC Schottky barrier diode Bare Die
SiC MOSFET Bare Die
FAQ
SiC Power Devices FAQ
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SiC Power Device
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