SiC Power Device｜Application
SiC MOSFETs： Snubber Circuit DesignsC Snubber Circuit Design
2024.09.25
Points of this article
・The larger the value of CSNB in a C snubber circuit, the greater is the surge suppression effect.
・However, the inductor LSNB in the snubber circuit must be smaller than LMAIN, and the capacitor ESL must be added to LSNB, so that care is required.
From this article, methods of designing each snubber circuit introduced in the previous article are explained. This article is devoted to design of a C snubber circuit.
- Surges occurring between drain and source
- Types and selection of snubber circuits
- C snubber circuit design
- RC snubber circuit design
- Discharge RCD snubber circuit design
- Non-discharge RCD snubber circuit design
- Difference in surge occurrence depending on package
SiC MOSFET: C Snubber Circuit Design
The C snubber circuit shown in Fig. 6 absorbs the energy accumulated inMAIN through CSNB. For this reason, the value of the inductance LSNB in the snubber circuit must be smaller than that ofMAIN. The energy accumulated in CSNB is essentially not discharged, and so the larger the capacitance, the greater is the surge suppression effect. However, the equivalent series inductance (ESL) of the capacitor used must also be added to LSNB.
In general, the larger the size of the capacitor, the greater is the ESL value, and so care is required when selecting the capacitance. Assuming that all of the energy accumulated in LMAIN is absorbed by CSNB, the capacitor should be selected with the capacitance value given by equation (2) as a rough guideline.
【Download Documents】 Basics of SiC Power Devices
This handbook explains the physical properties and advantages of SiC, the differences in characteristics and usage of SiC Schottky barrier diodes and SiC MOSFETs with a comparison to Si devices, and includes a description of full SiC modules with various advantages.
SiC Power Device
Basic
- What are SiC Schottky barrier diodes? ? Introduction
- What are SiC-MOSFETs? – SiC-MOSFET Features
- What are Full-SiC Power Modules?
- Summary
- Introduction
- What is silicon carbide?
Application
-
Introduction
- SiC MOSFET Bridge Configuration
- SiC MOSFET Gate Driving Circuit and Turn-On/Turn-Off Operation
- Currents and Voltages Occurring Due to Switching in Bridge Circuits
- Behavior of the Gate-Source Voltage During Low-side Switch Turn-on
- Behavior of the Gate-Source Voltage During Low-side Switch Turn-off
- Summary
- SiC MOSFETs: Method for Determining Losses from Switching Waveforms
-
SiC MOSFETs： Snubber Circuit Designs ーIntroductionー
- Non-Discharge RCD Snubber Circuit Design
- Surges Occurring between Drain and Source
- Types and Selection of Snubber Circuits
- C Snubber Circuit Design
- RC Snubber Circuit Design
- Discharge RCD Snubber Circuit Design
- Non-Discharge RCD Snubber Circuit Design
- Differences in Surge Occurrence Depending on Package
- SiC MOSFETs： Snubber Circuit Designs ーSummaryー
- Points to Note When Measuring SiC MOSFET Gate-Source Voltages: General Measurement Methods
-
Conventional MOSFET Driving Method
- Packages Provided with Driver Source Terminals
- Differences Made by and Benefits of a Driver Source Pin
- Benefits of a Driver Source Terminal: Comparisons Using Double Pulse Tests
- Behavior of Gate-Source Voltages when in a Bridge Configuration: Behavior at Turn-on
- Behavior of Gate-Source Voltages when in a Bridge Configuration: Behavior at Turn-off
- Points to be Noted Relating to Board Wiring Layout Key Points of This Article
- Verification of Loss Reduction Using Latest-Generation SiC MOSFETs
- About Surges in Gate-Source Voltages
Product Information
- SiC Schottky Barrier Diodes
- SiC MOSFET
- SiC Power Modules
- SiC Schottky barrier diode Bare Die
- SiC MOSFET Bare Die
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