SiC Power Device｜Basic
Trench-structure SiC-MOSFETs and Actual Products
2018.01.11
Points of this article
・ROHM has achieved mass production of SiC-MOSFETs that adopt an original double-trench structure.
・Trench-structure SiC-MOSFETs have an ON-resistance lower by about 50%, and an input capacitance lower by about 35%, compared with DMOS-structure products.
This time, we will explain the latest third-generation SiC-MOSFETs, and provide information relating to SiC-MOSFETs that can currently be obtained.
SiC-MOSFETs with an Original Double-Trench Structure
SiC-MOSFETs continue to evolve, and ROHM is now mass-producing SiC-MOSFETs that adopt the world’s first trench gate structure. These are ROHM’s third-generation SiC-MOSFETs.
Trench structures are widely used in Si-MOSFETs, and the use of trench structures in SiC-MOSFETs had attracted attention due to the effectiveness in lowering the ON- resistance.
However, in general single-trench structures, the electric field is concentrated at the bottom of the gate trench, and so long-term reliability has been an issue. But in the double-trench structure developed by ROHM, a trench structure is provided in the source area as well, so that electric field concentration at the bottom of the gate trench is alleviated and long-term reliability is secured, making possible mass production.
SiC-MOSFETs that adopt this double-trench structure have ON-resistances reduced by about 50%, and input capacitance reduced by about 35%, compared with second-generation planar-type (DMOS structure) SiC-MOSFETs already in mass production.
Actual SiC-MOSFET Products
Below is a list of SiC-MOSFETs that can be provided. These include the SCT series and the SCH series; the SCH series incorporate a SiC Schottky barrier diode, to address the reverse recovery characteristic of the body diode, for greatly improved characteristics.
In the list, those products with a SCT3xxx part number are third-generation trench-structure SiC MOSFETs.
【Download Documents】 Basics of SiC Power Devices
This handbook explains the physical properties and advantages of SiC, the differences in characteristics and usage of SiC Schottky barrier diodes and SiC MOSFETs with a comparison to Si devices, and includes a description of full SiC modules with various advantages.
SiC Power Device
Basic
- What are SiC Schottky barrier diodes? ? Introduction
- What are SiC-MOSFETs? – SiC-MOSFET Features
- What are Full-SiC Power Modules?
- Summary
- Introduction
- What is silicon carbide?
Application
-
Introduction
- SiC MOSFET Bridge Configuration
- SiC MOSFET Gate Driving Circuit and Turn-On/Turn-Off Operation
- Currents and Voltages Occurring Due to Switching in Bridge Circuits
- Behavior of the Gate-Source Voltage During Low-side Switch Turn-on
- Behavior of the Gate-Source Voltage During Low-side Switch Turn-off
- Summary
- SiC MOSFETs: Method for Determining Losses from Switching Waveforms
-
SiC MOSFETs： Snubber Circuit Designs ーIntroductionー
- Non-Discharge RCD Snubber Circuit Design
- Surges Occurring between Drain and Source
- Types and Selection of Snubber Circuits
- C Snubber Circuit Design
- RC Snubber Circuit Design
- Discharge RCD Snubber Circuit Design
- Non-Discharge RCD Snubber Circuit Design
- Differences in Surge Occurrence Depending on Package
- SiC MOSFETs： Snubber Circuit Designs ーSummaryー
- Points to Note When Measuring SiC MOSFET Gate-Source Voltages: General Measurement Methods
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Conventional MOSFET Driving Method
- Packages Provided with Driver Source Terminals
- Differences Made by and Benefits of a Driver Source Pin
- Benefits of a Driver Source Terminal: Comparisons Using Double Pulse Tests
- Behavior of Gate-Source Voltages when in a Bridge Configuration: Behavior at Turn-on
- Behavior of Gate-Source Voltages when in a Bridge Configuration: Behavior at Turn-off
- Points to be Noted Relating to Board Wiring Layout Key Points of This Article
- Verification of Loss Reduction Using Latest-Generation SiC MOSFETs
- About Surges in Gate-Source Voltages
Product Information
- SiC Schottky Barrier Diodes
- SiC MOSFET
- SiC Power Modules
- SiC Schottky barrier diode Bare Die
- SiC MOSFET Bare Die
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