SiC Power Device｜Application
Points to Note When Measuring SiC MOSFET Gate-Source Voltages－Summary－
2024.08.29
Points to Note When Measuring SiC MOSFET Gate-Source Voltages: Summary
Up this point, we have explained points to be noted pertaining to measurement of gate-source voltages, taking as examples bridge circuits that use SiC MOSFETs. The following summarizes these points to be followed for accurate measurements.
- When connecting probes, loops formed by the probe heads should be made as small as possible.
- When selecting measurement points for SiC MOSFETs, they should be chosen such that the loops formed with the measured terminals of the SiC MOSFET are as small as possible.
- Places for installation of probe heads should be places that, to the extent possible, are not affected by magnetic flux changes of the main circuit.
In verifying these matters, “extension cables and damping resistors” were used; by performing measurements directly below the device terminals, it was possible to observe waveforms as close as possible to the actual waveforms. However, the best approach to performing measurements will differ depending on the circuit configuration and wiring, and methods for performing measurements should be based on existing tendencies and should be devised according to the individual circumstances.
SiC Power Device
Basic
- What are SiC Schottky barrier diodes? ? Introduction
- What are SiC-MOSFETs? – SiC-MOSFET Features
- What are Full-SiC Power Modules?
- Summary
- Introduction
- What is silicon carbide?
Application
-
Introduction
- SiC MOSFET Bridge Configuration
- SiC MOSFET Gate Driving Circuit and Turn-On/Turn-Off Operation
- Currents and Voltages Occurring Due to Switching in Bridge Circuits
- Behavior of the Gate-Source Voltage During Low-side Switch Turn-on
- Behavior of the Gate-Source Voltage During Low-side Switch Turn-off
- Summary
- SiC MOSFETs: Method for Determining Losses from Switching Waveforms
-
SiC MOSFETs： Snubber Circuit Designs ーIntroductionー
- Non-Discharge RCD Snubber Circuit Design
- Surges Occurring between Drain and Source
- Types and Selection of Snubber Circuits
- C Snubber Circuit Design
- RC Snubber Circuit Design
- Discharge RCD Snubber Circuit Design
- Non-Discharge RCD Snubber Circuit Design
- Differences in Surge Occurrence Depending on Package
- SiC MOSFETs： Snubber Circuit Designs ーSummaryー
- Points to Note When Measuring SiC MOSFET Gate-Source Voltages: General Measurement Methods
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Conventional MOSFET Driving Method
- Packages Provided with Driver Source Terminals
- Differences Made by and Benefits of a Driver Source Pin
- Benefits of a Driver Source Terminal: Comparisons Using Double Pulse Tests
- Behavior of Gate-Source Voltages when in a Bridge Configuration: Behavior at Turn-on
- Behavior of Gate-Source Voltages when in a Bridge Configuration: Behavior at Turn-off
- Points to be Noted Relating to Board Wiring Layout Key Points of This Article
- Verification of Loss Reduction Using Latest-Generation SiC MOSFETs
- About Surges in Gate-Source Voltages
Product Information
- SiC Schottky Barrier Diodes
- SiC MOSFET
- SiC Power Modules
- SiC Schottky barrier diode Bare Die
- SiC MOSFET Bare Die
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