SiC Power Device｜Application
SiC MOSFETs： Snubber Circuit DesignsDischarge RCD Snubber Circuit Design
2024.10.09
Points of this article
・The design of a discharge RCD snubber circuit is basically the same as that of an RC snubber circuit.
・However, due to surge absorption by diodes, there is no need to check the resonance angular frequency using equation (5) as in the case of an RC snubber circuit.
・A diode with a small recovery current must be selected for use in this circuit.
Design of the third type of snubber circuit, the discharge RCD snubber circuit, is here explained.
- Surges occurring between drain and source
- Types and selection of snubber circuits
- C snubber circuit design
- RC snubber circuit design
- Discharge RCD snubber circuit design
- Non-discharge RCD snubber circuit design
- Difference in surge occurrence depending on package
SiC MOSFET: Discharge RCD Snubber Circuit Design
The design of a discharge RCD snubber circuit is essentially the same as the design of the previously discussed RC snubber circuit, but because of surge absorption by diodes, there is no need to confirm the resonance angular frequency using equation (5), which was cited in the RC snubber circuit explanation.
However, if the recovery current of the diodes being used is large, diode losses during high-frequency operation are considerable. Hence in order to reduce losses in such snubber circuits, diodes with as small a recovery current as possible must be selected.
Moreover, large current changes occur during surge absorption, and so the wiring inductance of snubber circuits should be kept as small as possible, among other considerations.
【Download Documents】 Basics of SiC Power Devices
This handbook explains the physical properties and advantages of SiC, the differences in characteristics and usage of SiC Schottky barrier diodes and SiC MOSFETs with a comparison to Si devices, and includes a description of full SiC modules with various advantages.
SiC Power Device
Basic
- What are SiC Schottky barrier diodes? ? Introduction
- What are SiC-MOSFETs? – SiC-MOSFET Features
- What are Full-SiC Power Modules?
- Summary
- Introduction
- What is silicon carbide?
Application
-
Introduction
- SiC MOSFET Bridge Configuration
- SiC MOSFET Gate Driving Circuit and Turn-On/Turn-Off Operation
- Currents and Voltages Occurring Due to Switching in Bridge Circuits
- Behavior of the Gate-Source Voltage During Low-side Switch Turn-on
- Behavior of the Gate-Source Voltage During Low-side Switch Turn-off
- Summary
- SiC MOSFETs: Method for Determining Losses from Switching Waveforms
-
SiC MOSFETs： Snubber Circuit Designs ーIntroductionー
- Non-Discharge RCD Snubber Circuit Design
- Surges Occurring between Drain and Source
- Types and Selection of Snubber Circuits
- C Snubber Circuit Design
- RC Snubber Circuit Design
- Discharge RCD Snubber Circuit Design
- Non-Discharge RCD Snubber Circuit Design
- Differences in Surge Occurrence Depending on Package
- SiC MOSFETs： Snubber Circuit Designs ーSummaryー
- Points to Note When Measuring SiC MOSFET Gate-Source Voltages: General Measurement Methods
-
Conventional MOSFET Driving Method
- Packages Provided with Driver Source Terminals
- Differences Made by and Benefits of a Driver Source Pin
- Benefits of a Driver Source Terminal: Comparisons Using Double Pulse Tests
- Behavior of Gate-Source Voltages when in a Bridge Configuration: Behavior at Turn-on
- Behavior of Gate-Source Voltages when in a Bridge Configuration: Behavior at Turn-off
- Points to be Noted Relating to Board Wiring Layout Key Points of This Article
- Verification of Loss Reduction Using Latest-Generation SiC MOSFETs
- About Surges in Gate-Source Voltages
Product Information
- SiC Schottky Barrier Diodes
- SiC MOSFET
- SiC Power Modules
- SiC Schottky barrier diode Bare Die
- SiC MOSFET Bare Die
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