SiC Power Device｜Application
SiC MOSFETs： Snubber Circuit Designs ーIntroductionー
2024.08.29
Points of this article
・In recent years, there have been steadily expanding applications of SiC MOSFETs in various power conversion applications, due to their fast switching operation.
・However, their fast operation results in the occurrence of large surges between drain and source. Such surges must be suppressed.
・Snubber circuits are one way to suppress such surges.
SiC MOSFETs： Snubber Circuit Designs – Introduction –
Recently there has been a rapid increase in the use of SiC MOSFETs as switching elements in various power supply applications and power line switching devices. One reason for this is that, compared with conventional power semiconductors, SiC MOSFETs are capable of faster switching. However, because the changes in voltage and current during switching are so sharp, the effects of the package inductance of the device itself as well as the wiring inductance of the surrounding circuit cannot be ignored, and as a result large surges occur between drain and source. These surges must be held below the maximum rating for the SiC MOSFETs used; there are various methods to suppress them. One such method of suppression is the addition of a snubber circuit.
In this section, the designs of snubber circuits are explained.
- Surges occurring between drain and source
- Types and selection of snubber circuits
- C snubber circuit design
- RC snubber circuit design
- Discharge RCD snubber circuit design
- Non-discharge RCD snubber circuit design
- Difference in surge occurrence depending on package
【Download Documents】 Basics of SiC Power Devices
This handbook explains the physical properties and advantages of SiC, the differences in characteristics and usage of SiC Schottky barrier diodes and SiC MOSFETs with a comparison to Si devices, and includes a description of full SiC modules with various advantages.
SiC Power Device
Basic
- What are SiC Schottky barrier diodes? ? Introduction
- What are SiC-MOSFETs? – SiC-MOSFET Features
- What are Full-SiC Power Modules?
- Summary
- Introduction
- What is silicon carbide?
Application
-
Introduction
- SiC MOSFET Bridge Configuration
- SiC MOSFET Gate Driving Circuit and Turn-On/Turn-Off Operation
- Currents and Voltages Occurring Due to Switching in Bridge Circuits
- Behavior of the Gate-Source Voltage During Low-side Switch Turn-on
- Behavior of the Gate-Source Voltage During Low-side Switch Turn-off
- Summary
- SiC MOSFETs: Method for Determining Losses from Switching Waveforms
-
SiC MOSFETs： Snubber Circuit Designs ーIntroductionー
- Non-Discharge RCD Snubber Circuit Design
- Surges Occurring between Drain and Source
- Types and Selection of Snubber Circuits
- C Snubber Circuit Design
- RC Snubber Circuit Design
- Discharge RCD Snubber Circuit Design
- Non-Discharge RCD Snubber Circuit Design
- Differences in Surge Occurrence Depending on Package
- SiC MOSFETs： Snubber Circuit Designs ーSummaryー
- Points to Note When Measuring SiC MOSFET Gate-Source Voltages: General Measurement Methods
-
Conventional MOSFET Driving Method
- Packages Provided with Driver Source Terminals
- Differences Made by and Benefits of a Driver Source Pin
- Benefits of a Driver Source Terminal: Comparisons Using Double Pulse Tests
- Behavior of Gate-Source Voltages when in a Bridge Configuration: Behavior at Turn-on
- Behavior of Gate-Source Voltages when in a Bridge Configuration: Behavior at Turn-off
- Points to be Noted Relating to Board Wiring Layout Key Points of This Article
- Verification of Loss Reduction Using Latest-Generation SiC MOSFETs
- About Surges in Gate-Source Voltages
Product Information
- SiC Schottky Barrier Diodes
- SiC MOSFET
- SiC Power Modules
- SiC Schottky barrier diode Bare Die
- SiC MOSFET Bare Die
FAQ