SiC Power Device｜Basic
What are SiC-MOSFETs? – Comparison of Power Transistor Structures and Features
2017.08.10
Points of this article
・The features of power transistors differ depending on the materials and structures.
・There are various advantages and disadvantages where characteristics are concerned, but SiC-MOSFETs exhibit excellent characteristics overall.
In succession to the preceding section, we compare different power transistors. This time, we compare their structures and features.
Comparison of Power Transistor Structures and Features
The following graphic compares the structures, rated voltages, ON-resistances, and switching speeds of various power transistors.
Structures differ depending on the process technology used, and the electrical characteristics are also different. Incidentally, DMOS is a general element structure that is a planar-type MOSFET. With Si power MOSFETs, both a high voltage and a reduced ON-resistance can be obtained, and in recent years super-junction structure MOSFETs (hereafter SJ-MOSFETs) have come into widespread use. We have presented a DMOS structure as an example of a SiC-MOSFET, but at present, ROHM is mass-producing trench-structure SiC-MOSFETs with further improved characteristics. We will be describing these devices in more detail in the future.
Features of the different element types are as described in the radar charts above. ON-resistance is an issue with Si-DMOS’s, and as explained above, by adopting a SJ-MOSFET structure, the ON-resistance is improved. IGBTs have superior ON-resistances and rated voltages, but switching speed is a problem. SiC-DMOS’s are switching elements which excel with respect to rated voltage, ON-resistance, and switching speed alike, and have the further major advantage of satisfactory operation at high temperatures.
This graph plots the normalized ON-resistances and rated voltages of various transistors. As is clear from the graph, theoretically SiC-DMOS enables the fabrication of transistors with high voltages and low ON-resistances. Current SiC-DMOS elements have characteristics within the region of the ellipse; further developments are expected to result in improved performance.
Next time, we will describe separate comparisons with SiC-MOSFET devices.
【Download Documents】 Basics of SiC Power Devices
This handbook explains the physical properties and advantages of SiC, the differences in characteristics and usage of SiC Schottky barrier diodes and SiC MOSFETs with a comparison to Si devices, and includes a description of full SiC modules with various advantages.
SiC Power Device
Basic
- What are SiC Schottky barrier diodes? ? Introduction
- What are SiC-MOSFETs? – SiC-MOSFET Features
- What are Full-SiC Power Modules?
- Summary
- Introduction
- What is silicon carbide?
Application
-
Introduction
- SiC MOSFET Bridge Configuration
- SiC MOSFET Gate Driving Circuit and Turn-On/Turn-Off Operation
- Currents and Voltages Occurring Due to Switching in Bridge Circuits
- Behavior of the Gate-Source Voltage During Low-side Switch Turn-on
- Behavior of the Gate-Source Voltage During Low-side Switch Turn-off
- Summary
- SiC MOSFETs: Method for Determining Losses from Switching Waveforms
-
SiC MOSFETs： Snubber Circuit Designs ーIntroductionー
- Non-Discharge RCD Snubber Circuit Design
- Surges Occurring between Drain and Source
- Types and Selection of Snubber Circuits
- C Snubber Circuit Design
- RC Snubber Circuit Design
- Discharge RCD Snubber Circuit Design
- Non-Discharge RCD Snubber Circuit Design
- Differences in Surge Occurrence Depending on Package
- SiC MOSFETs： Snubber Circuit Designs ーSummaryー
- Points to Note When Measuring SiC MOSFET Gate-Source Voltages: General Measurement Methods
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Conventional MOSFET Driving Method
- Packages Provided with Driver Source Terminals
- Differences Made by and Benefits of a Driver Source Pin
- Benefits of a Driver Source Terminal: Comparisons Using Double Pulse Tests
- Behavior of Gate-Source Voltages when in a Bridge Configuration: Behavior at Turn-on
- Behavior of Gate-Source Voltages when in a Bridge Configuration: Behavior at Turn-off
- Points to be Noted Relating to Board Wiring Layout Key Points of This Article
- Verification of Loss Reduction Using Latest-Generation SiC MOSFETs
- About Surges in Gate-Source Voltages
Product Information
- SiC Schottky Barrier Diodes
- SiC MOSFET
- SiC Power Modules
- SiC Schottky barrier diode Bare Die
- SiC MOSFET Bare Die
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