SiC Power Device｜Basic
Development Background and Advantages of SiC Power Devices
2016.10.06
Points of this article
・SiC has been developed as one solution to energy-related problems.
・In addition to reducing losses, SiC offers the major advantage of miniaturization.
table of contents
The last time, the physical properties of SiC and the features of SiC power devices were explained. SiC power devices are capable of high voltages, low on resistances and fast operation exceeding Si power devices, and can operate at higher temperatures as well. This time, we will talk about the background to development of SiC devices and their specific advantages.
Development Background of SiC Power Devices
Previously we explained that by using SiC in power devices, power conversion can be performed with lower losses than is possible using conventional Si power devices. The reader will already understand that this has been a major reason for the commercialization of power devices using SiC. It should also be easy to imagine that the background to this development was the worldwide goal of promoting energy efficiency.
Taking as examples low-power DC-DC converters, the spread of mobile devices has resulted in conversion efficiencies that exceed 90% as a matter of course. However, it is thought that there is still room for improvement of the efficiency of high-voltage and large-current AC-DC converters. It is well known that directives for energy conservation, centered on the EU, have resulted in urgent demands for energy efficiency including reduced standby power consumption of electric and electronic equipment.
Given such circumstances, reducing energy losses that occur during power conversion is an urgent order of business, and to this end, naturally a material that transcends the limits of Si must be utilized in power devices.
By using SiC power devices, switching losses can be cut by 85% compared for example with IGBTs. As indicated in this example, there can be no doubt that SiC power devices are one solution to energy problems.
Advantages of SiC
As already stated, by using SiC, large reductions in energy losses become possible. Of course, this is a major advantage, but let’s consider such other advantages as low resistance, fast, operation, and high-temperature operation, which are also features of SiC.
We proceed with a comparison with Si. “Low resistance” leads directly to low losses, but for the same resistance value, the area of an element (chip) can be made smaller. When handling large amounts of power, sometimes power modules are used, in which multiple transistors and diodes are incorporated into a module. As an example, a SiC power module can be designed to be about 1/10 the size of an Si module.
Where “fast operation” is concerned, by raising the switching frequency, smaller peripheral components such as transformers, coils and capacitors can be used. There are examples in which sizes could actually be shrunk to 1/10 or so.
“High-temperature operation” means that operation at higher temperatures is allowed, and so heat sinks and other cooling mechanisms can be simplified.
Thus there is of course an approach in which SiC is used to improve efficiency and to enable handling of larger currents, but for power levels currently used, adopting SiC has the further major advantage of enabling dramatic miniaturization. As opposed to direct energy conservation, indirectly reducing energy consumption as a result of installation locations, transportation and the like is another major goal.
【Download Documents】 Basics of SiC Power Devices
This handbook explains the physical properties and advantages of SiC, the differences in characteristics and usage of SiC Schottky barrier diodes and SiC MOSFETs with a comparison to Si devices, and includes a description of full SiC modules with various advantages.
SiC Power Device
Basic
- What are SiC Schottky barrier diodes? ? Introduction
- What are SiC-MOSFETs? – SiC-MOSFET Features
- What are Full-SiC Power Modules?
- Summary
- Introduction
- What is silicon carbide?
Application
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Introduction
- SiC MOSFET Bridge Configuration
- SiC MOSFET Gate Driving Circuit and Turn-On/Turn-Off Operation
- Currents and Voltages Occurring Due to Switching in Bridge Circuits
- Behavior of the Gate-Source Voltage During Low-side Switch Turn-on
- Behavior of the Gate-Source Voltage During Low-side Switch Turn-off
- Summary
- SiC MOSFETs: Method for Determining Losses from Switching Waveforms
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SiC MOSFETs： Snubber Circuit Designs ーIntroductionー
- Non-Discharge RCD Snubber Circuit Design
- Surges Occurring between Drain and Source
- Types and Selection of Snubber Circuits
- C Snubber Circuit Design
- RC Snubber Circuit Design
- Discharge RCD Snubber Circuit Design
- Non-Discharge RCD Snubber Circuit Design
- Differences in Surge Occurrence Depending on Package
- SiC MOSFETs： Snubber Circuit Designs ーSummaryー
- Points to Note When Measuring SiC MOSFET Gate-Source Voltages: General Measurement Methods
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Conventional MOSFET Driving Method
- Packages Provided with Driver Source Terminals
- Differences Made by and Benefits of a Driver Source Pin
- Benefits of a Driver Source Terminal: Comparisons Using Double Pulse Tests
- Behavior of Gate-Source Voltages when in a Bridge Configuration: Behavior at Turn-on
- Behavior of Gate-Source Voltages when in a Bridge Configuration: Behavior at Turn-off
- Points to be Noted Relating to Board Wiring Layout Key Points of This Article
- Verification of Loss Reduction Using Latest-Generation SiC MOSFETs
- About Surges in Gate-Source Voltages
Product Information
- SiC Schottky Barrier Diodes
- SiC MOSFET
- SiC Power Modules
- SiC Schottky barrier diode Bare Die
- SiC MOSFET Bare Die
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