SiC Power Device｜Basic
What are SiC-MOSFETs? – SiC-MOSFET Features
2017.07.06
Points of this article
・SiC-MOSFETs can contribute to reduced losses and smaller application size relative to Si-MOSFETs and IGBTs.
In succession to the discussion of SiC-SBDs which was concluded last time, we now begin an explanation of SiC-MOSFETs. The role of transistors in power conversion circuits is vital, and various efforts are being made to improve transistors in order to reduce losses and enable smaller application size. We have previously explained the advantages of SiC semiconductor power devices, and the benefits conferred by low losses, fast switching, high-temperature operation and the like should be immediately obvious. In this chapter, we would like to deepen the reader’s understanding of SiC-MOSFETs through comparison with other power transistors.
SiC-MOSFET Features
In the chapter on SiC-SBDs, a similar graphic was used to explain the rated voltage ranges covered by different devices. This graphic similarly indicates the rated voltage ranges of SiC-MOSFETs, compared with Si power devices.
At present, SiC-MOSFETs are regarded as useful from voltages of 600 V upward, and in particular 1 kV and higher. Where advantages are considered, we will compare these devices with Si-IGBTs, which are currently the mainstream for elements rated at 1 kV and higher. SiC-MOSFETs achieve reduced losses while switched off compared with IGBTs, and a smaller-size application can be expected through the realization of high-frequency operation. Compared with SJ-MOSFETs (super-junction MOSFETs) with comparable rated voltage, ON-resistance values are low, and so reduced chip areas and greatly reduced recovery losses are possible for the same ON-resistance.
The following table summarizes the features of power devices with rated voltages ranging from 600 V to 2000 V.
In the radar charts, RonA is the ON-resistance per unit area (a parameter representing losses during conduction), BV is the rated device voltage, Err is the recovery loss, and Eoff is the loss during switching off. SiC devices are pretty much perfect on all counts; and this comparison in no way overstates the performance of SiC devices.
From the next section, we will explain the features of SiC-MOSFETs in more detail, including comparisons with SJ-MOSFETs and IGBTs.
【Download Documents】 Basics of SiC Power Devices
This handbook explains the physical properties and advantages of SiC, the differences in characteristics and usage of SiC Schottky barrier diodes and SiC MOSFETs with a comparison to Si devices, and includes a description of full SiC modules with various advantages.
SiC Power Device
Basic
- What are SiC Schottky barrier diodes? ? Introduction
- What are SiC-MOSFETs? – SiC-MOSFET Features
- What are Full-SiC Power Modules?
- Summary
- Introduction
- What is silicon carbide?
Application
-
Introduction
- SiC MOSFET Bridge Configuration
- SiC MOSFET Gate Driving Circuit and Turn-On/Turn-Off Operation
- Currents and Voltages Occurring Due to Switching in Bridge Circuits
- Behavior of the Gate-Source Voltage During Low-side Switch Turn-on
- Behavior of the Gate-Source Voltage During Low-side Switch Turn-off
- Summary
- SiC MOSFETs: Method for Determining Losses from Switching Waveforms
-
SiC MOSFETs： Snubber Circuit Designs ーIntroductionー
- Non-Discharge RCD Snubber Circuit Design
- Surges Occurring between Drain and Source
- Types and Selection of Snubber Circuits
- C Snubber Circuit Design
- RC Snubber Circuit Design
- Discharge RCD Snubber Circuit Design
- Non-Discharge RCD Snubber Circuit Design
- Differences in Surge Occurrence Depending on Package
- SiC MOSFETs： Snubber Circuit Designs ーSummaryー
- Points to Note When Measuring SiC MOSFET Gate-Source Voltages: General Measurement Methods
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Conventional MOSFET Driving Method
- Packages Provided with Driver Source Terminals
- Differences Made by and Benefits of a Driver Source Pin
- Benefits of a Driver Source Terminal: Comparisons Using Double Pulse Tests
- Behavior of Gate-Source Voltages when in a Bridge Configuration: Behavior at Turn-on
- Behavior of Gate-Source Voltages when in a Bridge Configuration: Behavior at Turn-off
- Points to be Noted Relating to Board Wiring Layout Key Points of This Article
- Verification of Loss Reduction Using Latest-Generation SiC MOSFETs
- About Surges in Gate-Source Voltages
Product Information
- SiC Schottky Barrier Diodes
- SiC MOSFET
- SiC Power Modules
- SiC Schottky barrier diode Bare Die
- SiC MOSFET Bare Die
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