SiC Power Device｜Basic
SiC Application Examples
2018.02.08
Points of this article
・The effectiveness of SiC-MOSFETs should be considered carefully, taking hints from case studies that utilize SiC-MOSFETs.
This time, we will present several examples of SiC-MOSFET application. This will include some older information and prototype-level information, but it should be of use for illustrating the advantages of using SiC-MOSFETs and presenting new possibilities. In addition to SiC-MOSFETs, examples of the use of SiC-SBDs and full SiC modules can be viewed here.
SiC-MOSFET Application Example 1: Phase-Shift DC-DC Converters
The demonstration unit shown below was fabricated jointly with Power Assist Technology, Ltd.
Three types of transistors–Si IGBTs, second-generation SiC-MOSFETs, and the third-generation trench-structure SiC-MOSFETs described the last time–were used in the full-bridge inverter sections to construct three types of phase-shift DC-DC converters of the same size as demo units. The figures below show the comparison of efficiencies.
When using SiC-MOSFETs, superior switching performance is exhibited, achieving high-frequency operation at 100 kHz and enhanced power performance that would be difficult to achieve using Si IGBTs. When using second-generation (2G) SiC-MOSFETs, a single switch is configured by connecting two transistors in parallel, but when using third-generation (3G) SiC-MOSFETs, by reducing the ON-resistance, the number of transistors can be decreased from eight to four. The best results for efficiency are obtained using the third-generation (3G) SiC MOSFETs, but both the SiC-MOSFET types achieve higher performance than is possible using the Si IGBTs.
SiC-MOSFET Application Example 2: Pulse Power
Pulse power is a system which supplies power instantaneously for short periods of time; application examples include gas lasers, accelerators, X-ray sources, plasma power supplies, and the like. Existing solutions include vacuum tubes (e.g. thyratrons) and Si switches, but there have been demands for higher rated voltages and faster switching. In response to the demands, SiC MOSFETs have achieved ultra-high voltage high-speed switching by combining high rated voltages and fast operation. This is something that could not easily be achieved using Si IGBTs from the standpoint of operation speed. The following example was submitted to CEATEC 2014 and Techno-Frontier 2015 with the cooperation of Fukushima SiC Applied Engineering, Kyoto Neutronics, and Japan Science and Technology Agency.
・Ultra-high-voltage pulse power supply
- Features
- ・Ultra-high-voltage pseudo-N-channel SiC MOSFET
- ・Low ON-resistance
- ・High repetition frequency
- Applications
- ・Charged-particle accelerator
- ・Medical equipment power supply
- ・Plasma generator
・1-10kV random pulse generator: 13.2kV SiC switch
【Download Documents】 Basics of SiC Power Devices
This handbook explains the physical properties and advantages of SiC, the differences in characteristics and usage of SiC Schottky barrier diodes and SiC MOSFETs with a comparison to Si devices, and includes a description of full SiC modules with various advantages.
SiC Power Device
Basic
- What are SiC Schottky barrier diodes? ? Introduction
- What are SiC-MOSFETs? – SiC-MOSFET Features
- What are Full-SiC Power Modules?
- Summary
- Introduction
- What is silicon carbide?
Application
-
Introduction
- SiC MOSFET Bridge Configuration
- SiC MOSFET Gate Driving Circuit and Turn-On/Turn-Off Operation
- Currents and Voltages Occurring Due to Switching in Bridge Circuits
- Behavior of the Gate-Source Voltage During Low-side Switch Turn-on
- Behavior of the Gate-Source Voltage During Low-side Switch Turn-off
- Summary
- SiC MOSFETs: Method for Determining Losses from Switching Waveforms
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SiC MOSFETs： Snubber Circuit Designs ーIntroductionー
- Non-Discharge RCD Snubber Circuit Design
- Surges Occurring between Drain and Source
- Types and Selection of Snubber Circuits
- C Snubber Circuit Design
- RC Snubber Circuit Design
- Discharge RCD Snubber Circuit Design
- Non-Discharge RCD Snubber Circuit Design
- Differences in Surge Occurrence Depending on Package
- SiC MOSFETs： Snubber Circuit Designs ーSummaryー
- Points to Note When Measuring SiC MOSFET Gate-Source Voltages: General Measurement Methods
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Conventional MOSFET Driving Method
- Packages Provided with Driver Source Terminals
- Differences Made by and Benefits of a Driver Source Pin
- Benefits of a Driver Source Terminal: Comparisons Using Double Pulse Tests
- Behavior of Gate-Source Voltages when in a Bridge Configuration: Behavior at Turn-on
- Behavior of Gate-Source Voltages when in a Bridge Configuration: Behavior at Turn-off
- Points to be Noted Relating to Board Wiring Layout Key Points of This Article
- Verification of Loss Reduction Using Latest-Generation SiC MOSFETs
- About Surges in Gate-Source Voltages
Product Information
- SiC Schottky Barrier Diodes
- SiC MOSFET
- SiC Power Modules
- SiC Schottky barrier diode Bare Die
- SiC MOSFET Bare Die
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