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2021.10.27 Si Power Device

Guidelines Relating to Operation of Switching Elements Under Light Loading

Improving the Power Conversion Efficiency of Phase Shift Full Bridge Circuits

Because under light loading currents are small and the energy accumulated in LS is small, there is increased possibility that switching operation may begin without complete charge and discharge of COSS in the lagging leg. Consequently ZVS operation is not achieved and MOSFET turn-on losses occur more readily.

On the other hand, during charging and discharging of the COSS capacitors of the leading leg MOSFETs, energy is being sent to the secondary side via the transformer. When, as in the previous discussion, the conditions for ZVS establishment are considered in terms of energy balance, taking Mode (2) as an example, if the transformer windings ratio is n, then the condition for ZVS in the leading leg can be expressed by the following inequality. Here IL2 is the IL at the end of Mode (1), and EOSS_Q1 and EOSS_Q2 are respectively the energy necessary for charge/discharge completion of the COSS capacitors of Q1 and Q2.

In actual circuit operation, a dead time must be provided in order to prevent upper and lower arm short-circuits. As explained above, under light loading it is possible that charge/discharge of lagging leg MOSFETs is not completed, that is, drain voltages VDS may remain (resulting in hard switching); consequently, depending on how the dead time is set, MOSFET turn-on losses in lagging leg may increase. Hence care must be taken when setting the dead time.

The following is a summary diagram of turn-on behavior when the dead time is and is not optimized.

When the dead time is not optimized, an instantaneous large drain current ID flows. This is a consequence of two currents: a shoot-through current resulting when the gate-source voltage VGS exceeds the threshold voltage because of the capacitance ratio of the gate-drain capacitance CGD and the gate-source capacitance CGS, and the current charging the COSS of the opposite arm MOSFET. Of these, the latter, the current charging the COSS, always occurs during hard switching operation, but the former, the shoot-through current, can be prevented in advance by appropriately setting the capacitance ratio of CGD and CGS for the MOSFET. Hence it is important to choose MOSFETs that have an appropriate CGD to CGS capacitance ratio.

Key Points:

・Under light loading, currents are small, and the accumulated energy in LS is small, so that it is entirely possible that switching operation may begin without complete COSS charging/discharging, as a result of which ZVS operation is not possible, and MOSFET turn-on losses readily occur.

・Due to incomplete COSS charging/discharging, VDS may remain, and so in order to prevent shoot-through currents caused by upper/lower arm short-circuits, it is important that the dead time be set appropriately.

・Because a shoot-through current may flow depending on the capacitance ratio of CGD and CGS of a MOSFET, it is important that MOSFETs with an appropriate capacitance ratio be selected.

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