Transistors|Basic
What is a Load Switch?
A load switch is an electronic component that has no moving parts, which works somewhat like a relay. Generally, two MOSFET transistors act like a switching element, one of them being an N-channel device, and the other a P-channel device.
Below we will cover when that switching element is either ON or OFF, and what that entails.
Inrush Current When the Load Switch is ON
When the load switch (Q1 in the diagram below) is turned ON, a large current much greater than the steady-state current will temporarily flow. If the charge on the capacitor is close to zero then a large inrush current occurs, voltage is supplied to the output Vo, resulting in an instantaneous and large charge in current flow. This excessive current is often referred to as inrush current.
The peak of the inrush current is largely determined by the input voltage Vi, Rds(on) of the Q1 MOSFET, and the ESR of the load capacitance CL on the load side, and increases along with the input voltage Vi. Excessively large inrush current can cause system failures or malfunctions. Exceeding the maximum rated current can also result in destruction.
However, by adding a C2 capacitor in parallel with the R1 resistor connected between the Gate and Base of the Q1 MOSFET it is possible to slow the decrease of the Gate voltage, which will gradually reduce Rds(on) and suppress the inrush current.
Load Switch Equivalent Circuit Diagram

Inrush Current Countermeasure (When the Nch MOSFET Load Switch is Turned ON)
Nch MOSFET Load Switch: RSQ020N03
Vin=5V, Io=1A, Q1_1G=1V?12V
- The load switch Q1 is ON when Q2 is OFF (the Q1 Gate voltage will be greater than Vo (Q1 Vgs))
- The load switch Q1 is OFF when Q2 is ON
- As a countermeasure, C2 has been added to minimize inrush current when Q1 is turned ON
Nch MOSFET Load Switch Equivalent Circuit Diagram


Reverse Current When the Load Switch is Turned OFF
Even when the load switch Q1 is switched from ON to OFF, voltage at the output Vo pin will remain for a certain period of time based on the load capacitance CL at the output side.
If the voltage at Vi is lower than Vo, reverse current may flow from the Vo output to the Vin input through the parasitic diode formed between the Q1 MOSFET Drain and Source. Make sure that the rated current of the Q1 MOSFET is never exceeded under any circumstances. In addition, consider the rise timing, taking into account the load conditions, when determining the capacitance value of the input bypass capacitor CIN.
Load Switch Equivalent Circuit Diagram

Transistors
Basic
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Basics of Transistors
- Transistor Fundamentals: Structure, Types, and Operating Principles
- Bipolar Junction Transistor (BJT) Basics: Operation and Applications (NPN & PNP)
- NPN Transistor: Low-Side Switch Fundamentals
- PNP Transistor: High-Side Switch Fundamentals
- What is a Digital Transistor?
- Digital Transistor Selection
- ON Resistance
- Total Gate Charge
- How to select<Selecting Transistors to Ensure Safe Operation>
- Junction Temperature <Calculating Transistor Chip Temperature>
- What is a Load Switch?
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Basics of MOSFETs
- What are MOSFETs? – MOSFET Parasitic Capacitance and Its Temperature Characteristic
- What are MOSFETs? – MOSFET Switching Characteristics and Temperature Characteristics
- What are MOSFETs? – MOSFET Threshold Values, ID-VGS Characteristics, and Temperature Characteristics
- What are MOSFETs? – Super-junction MOSFET
- What are MOSFETs? – Types and Features of High Voltage Super-Junction MOSFET
- What are MOSFETs? – Fast trr SJ-MOSFET:PrestoMOS™
- MOSFET Thermal Resistance and Power Dissipation: Packages Capable of Back-Surface Heat Dissipation
- Introduction
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Confirming the Suitability of a Transistor in Actual Operation – Introduction
- Confirmation of the Chip Temperature
- Confirmation of Suitability in Actual Operation and Preparations
- Confirmation that Absolute Maximum Ratings are Satisfied
- Confirmation that Operation is within the SOA (Safe Operating Area)
- Confirmation that Operation is within the SOA Derated at the Actual Operating Temperature
- Confirmation that Average Power Consumption is within the Rated Power
- Summary
- Summary
Evaluation
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The Importance of the Recovery Characteristics of Primary-side Switching Elements in LLC Converters -Introduction-
- Basic Configuration of an LLC Converter
- Features of LLC Converter Operation
- Basic Operation of LLC Converters
- Importance of MOSFET Recovery Characteristics for Off-Resonance of LLC Converters
- The Importance of the Recovery Characteristics of Primary-side Switching Elements in LLC Converters ーSummaryー
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The Importance of the Reverse Recovery Characteristics of Switching Elements in Inverter Circuits -Introduction-
- Types of Inverter Circuits and Energization Methods
- Basic Operation of 3-Phase Modulation Inverter Circuits
- Comparison of Losses in a PrestoMOS™ MOSFET and a Standard SJ MOSFET Using Double-Pulse Tests (Actual Measurement Results)
- Comparison of Efficiency of a PrestoMOS™ MOSFET and a Standard SJ MOSFET in a 3-Phase Modulation Inverter Circuit (Simulations)
- The Importance of the Reverse Recovery Characteristics of Switching Elements in Inverter Circuits -Summary-
- Mechanisms of MOSFET Destruction
- About Double-Pulse Tests
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Improving the Power Conversion Efficiency of Phase Shift Full Bridge Circuits – Introduction
- Basic Configuration of a PSFB Circuit
- Basic Operation of PSFB Circuits
- Guidelines Relating to Operation of Switching Elements Under Light Loading
- Guidelines Relating to Operation of Switching Elements Under Heavy Loading
- Evaluation of Efficiency
- Improving the Power Conversion Efficiency of Phase Shift Full Bridge Circuit – Summary –