Transistors|Evaluation
Features of LLC Converter Operation
2024.02.08
Points of this article
・Reduced switching losses are one advantage of LLC converters, but off-resonance may cause increased switching losses, possibly leading to MOSFET destruction.
・LLC converters use a PFM method to control the output voltage. Because the gain-frequency characteristic of an LLC has two resonance frequencies, operation is classified by the fsw into three operating regions.
This article is on the second topic, “Features of LLC Converter Operation”.
- ■ Basic Configuration of an LLC Converter
- ■ Features of LLC converter operation
- ■ Basic Operation of LLC Converters
- ■ Importance of MOSFET Recovery Characteristics for Off-Resonance of LLC Converters
Features of LLC Converter Operation
The following table summarizes the advantages and disadvantages of LLC converters when focusing on the primary-side MOSFETs in the basic circuit presented in the previous article. The LLC converter achieves ZVS operation using a partial resonance method for charge/discharge of the output capacitance Coss of the MOSFETs using a magnetizing current. Switching losses can thus be reduced, and the sizes of MOSFET packages and heat sinks for heat dissipation can be shrunk.
| Advantages | Disadvantages |
|---|---|
|
|
In an LLC converter, frequency modulation (Pulse Frequency Modulation, hereafter “PFM”) which changes the switching frequency fsw of the MOSFETs is used to control the output voltage. This circuit design has two resonance frequencies, represented by equations (1) and (2) using the values of Lr, Lm, and Cr; the circuit operation changes depending on the setting of the switching frequency.

Fig. 2 is a graph of the gain-frequency characteristics. Operation is classified into three regions according to the switching frequency and the DC gain.

Fig. 2. Graph of LLC converter gain-frequency characteristics
The operating regions are explained below.
| Region(1) | Inductive load region. Through partial resonance using a magnetizing current, ZVS operation is achieved. |
|---|---|
| Region(2) | Similarly to region (1), ZVS operation occurs. In this region, G>1, so step-up operation is performed. Normally, LLC converters use this region. |
| Region(3) | Capacitive load region. Here ZCS rather than ZVS operation occurs. Because current flows in the negative direction when the MOSFETs are turned off, currents flow in the MOSFET body diodes, and a shoot-through current due to the reverse recovery characteristic of the body diode flows in the opposite arm, so that turn-on losses increase. |
Transistors
Basic
-
Basics of Transistors
- Transistor Fundamentals: Structure, Types, and Operating Principles
- Bipolar Junction Transistor (BJT) Basics: Operation and Applications (NPN & PNP)
- NPN Transistor: Low-Side Switch Fundamentals
- PNP Transistor: High-Side Switch Fundamentals
- What is a Digital Transistor?
- Digital Transistor Selection
- ON Resistance
- Total Gate Charge
- How to select<Selecting Transistors to Ensure Safe Operation>
- Junction Temperature <Calculating Transistor Chip Temperature>
- What is a Load Switch?
-
Basics of MOSFETs
- What are MOSFETs? – MOSFET Parasitic Capacitance and Its Temperature Characteristic
- What are MOSFETs? – MOSFET Switching Characteristics and Temperature Characteristics
- What are MOSFETs? – MOSFET Threshold Values, ID-VGS Characteristics, and Temperature Characteristics
- What are MOSFETs? – Super-junction MOSFET
- What are MOSFETs? – Types and Features of High Voltage Super-Junction MOSFET
- What are MOSFETs? – Fast trr SJ-MOSFET:PrestoMOS™
- MOSFET Thermal Resistance and Power Dissipation: Packages Capable of Back-Surface Heat Dissipation
- Introduction
-
Confirming the Suitability of a Transistor in Actual Operation – Introduction
- Confirmation of the Chip Temperature
- Confirmation of Suitability in Actual Operation and Preparations
- Confirmation that Absolute Maximum Ratings are Satisfied
- Confirmation that Operation is within the SOA (Safe Operating Area)
- Confirmation that Operation is within the SOA Derated at the Actual Operating Temperature
- Confirmation that Average Power Consumption is within the Rated Power
- Summary
- Summary
Evaluation
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The Importance of the Recovery Characteristics of Primary-side Switching Elements in LLC Converters -Introduction-
- Basic Configuration of an LLC Converter
- Features of LLC Converter Operation
- Basic Operation of LLC Converters
- Importance of MOSFET Recovery Characteristics for Off-Resonance of LLC Converters
- The Importance of the Recovery Characteristics of Primary-side Switching Elements in LLC Converters ーSummaryー
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The Importance of the Reverse Recovery Characteristics of Switching Elements in Inverter Circuits -Introduction-
- Types of Inverter Circuits and Energization Methods
- Basic Operation of 3-Phase Modulation Inverter Circuits
- Comparison of Losses in a PrestoMOS™ MOSFET and a Standard SJ MOSFET Using Double-Pulse Tests (Actual Measurement Results)
- Comparison of Efficiency of a PrestoMOS™ MOSFET and a Standard SJ MOSFET in a 3-Phase Modulation Inverter Circuit (Simulations)
- The Importance of the Reverse Recovery Characteristics of Switching Elements in Inverter Circuits -Summary-
- Mechanisms of MOSFET Destruction
- About Double-Pulse Tests
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Improving the Power Conversion Efficiency of Phase Shift Full Bridge Circuits – Introduction
- Basic Configuration of a PSFB Circuit
- Basic Operation of PSFB Circuits
- Guidelines Relating to Operation of Switching Elements Under Light Loading
- Guidelines Relating to Operation of Switching Elements Under Heavy Loading
- Evaluation of Efficiency
- Improving the Power Conversion Efficiency of Phase Shift Full Bridge Circuit – Summary –