Transistors｜Evaluation
Mechanisms of MOSFET Destruction －Summary－
2023.11.08
Up to this point, we have discussed SOA destruction, avalanche breakdown-induced destruction, and dV/dt destruction of MOSFETs. Of course, the absolute maximum ratings in the specifications for a MOSFET must not be exceeded, but in addition, choosing circuit designs and operation conditions based on an understanding of the mechanisms of these destruction types is extremely important for the safe use of MOSFETs.
Below are links to the articles and the key points of each.
About SOA (Safe Operating Area）Destruction
Key Points of This Article
・SOA is an abbreviation of Safe Operating Area, meaning the range within which operation is safe.
・MOSFETs and other devices are used within the SOA range.
・There are five conditions that set limits on the SOA; if any of these are exceeded, destruction is possible.
About Destruction due to Avalanche Breakdown
Key Points of This Article
・When a voltage equal to or greater than the absolute maximum rating BVDSS is applied to a MOSFET, avalanche breakdown occurs.
・When avalanche breakdown occurs, a large current flows, and there is the risk of MOSFET destruction.
・MOSFET destruction due to avalanche breakdown may be short-circuit destruction or thermal destruction.
Key Points of This Article
・dV/dt destruction is a phenomenon in which the charging current flowing through the parasitic capacitance Cds while a MOSFET is turned off flows through the base resistor RB, causing the parasitic bipolar transistor to switch to the on state and leading to short-circuit destruction.
・dV/dt is the voltage change per unit time; the steeper the rise of VDS, the more readily dV/dt destruction occurs.
・In general, the poorer the reverse recovery characteristic, the steeper dV/dt becomes, and the greater the tendency for destruction.
Transistors
Basic
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Basics of Transistors
- Transistor Fundamentals: Structure, Types, and Operating Principles
- Bipolar Junction Transistor (BJT) Basics: Operation and Applications (NPN & PNP)
- NPN Transistor: Low-Side Switch Fundamentals
- PNP Transistor: High-Side Switch Fundamentals
- What is a Digital Transistor?
- Digital Transistor Selection
- ON Resistance
- Total Gate Charge
- How to select＜Selecting Transistors to Ensure Safe Operation＞
- Junction Temperature ＜Calculating Transistor Chip Temperature＞
- What is a Load Switch?
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Basics of MOSFETs
- What are MOSFETs? – MOSFET Parasitic Capacitance and Its Temperature Characteristic
- What are MOSFETs? – MOSFET Switching Characteristics and Temperature Characteristics
- What are MOSFETs? – MOSFET Threshold Values, ID-VGS Characteristics, and Temperature Characteristics
- What are MOSFETs? – Super-junction MOSFET
- What are MOSFETs? – Types and Features of High Voltage Super-Junction MOSFET
- What are MOSFETs? – Fast trr SJ-MOSFET：PrestoMOS™
- MOSFET Thermal Resistance and Power Dissipation: Packages Capable of Back-Surface Heat Dissipation
- Introduction
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Confirming the Suitability of a Transistor in Actual Operation – Introduction
- Confirmation of the Chip Temperature
- Confirmation of Suitability in Actual Operation and Preparations
- Confirmation that Absolute Maximum Ratings are Satisfied
- Confirmation that Operation is within the SOA (Safe Operating Area)
- Confirmation that Operation is within the SOA Derated at the Actual Operating Temperature
- Confirmation that Average Power Consumption is within the Rated Power
- Summary
- Summary
Evaluation
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The Importance of the Recovery Characteristics of Primary-side Switching Elements in LLC Converters －Introduction－
- Basic Configuration of an LLC Converter
- Features of LLC Converter Operation
- Basic Operation of LLC Converters
- Importance of MOSFET Recovery Characteristics for Off-Resonance of LLC Converters
- The Importance of the Recovery Characteristics of Primary-side Switching Elements in LLC Converters ーSummaryー
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The Importance of the Reverse Recovery Characteristics of Switching Elements in Inverter Circuits －Introduction－
- Types of Inverter Circuits and Energization Methods
- Basic Operation of 3-Phase Modulation Inverter Circuits
- Comparison of Losses in a PrestoMOS™ MOSFET and a Standard SJ MOSFET Using Double-Pulse Tests (Actual Measurement Results)
- Comparison of Efficiency of a PrestoMOS™ MOSFET and a Standard SJ MOSFET in a 3-Phase Modulation Inverter Circuit (Simulations)
- The Importance of the Reverse Recovery Characteristics of Switching Elements in Inverter Circuits －Summary－
- Mechanisms of MOSFET Destruction
- About Double-Pulse Tests
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Improving the Power Conversion Efficiency of Phase Shift Full Bridge Circuits – Introduction
- Basic Configuration of a PSFB Circuit
- Basic Operation of PSFB Circuits
- Guidelines Relating to Operation of Switching Elements Under Light Loading
- Guidelines Relating to Operation of Switching Elements Under Heavy Loading
- Evaluation of Efficiency
- Improving the Power Conversion Efficiency of Phase Shift Full Bridge Circuit – Summary –