Transistors|Basic
Confirmation that Absolute Maximum Ratings are Satisfied
2017.11.24
Points of this article
・Correctly understand the definition and purpose of absolute maximum ratings, and learn to judge whether a component can be used.
In this chapter, we explain the method and procedure for judging whether or not a selected transistor is appropriate for actual operation.
This time, we will explain ② ”Confirmation that absolute maximum ratings are satisfied” in the flowchart on the right.
- ① Measurement of the actual currentand voltage waveforms
- ② Confirmation that absolutemaximum ratings are satisfied
- ③ Confirmation that operation is withinthe SOA (safe operating area)
- ④ Confirmation that operation is withinthe SOA derated at the ambientoperating temperature
- ⑤ Continuous pulses (switching operation)
- ⑥ Confirmation that average powerconsumption is within the rated power
- ⑦ Confirmation of the chip temperature

② Confirmation that Absolute Maximum Ratings are Satisfied
To begin with, we will review the definition of “absolute maximum rating”. In the JIS C 7032 standard, an absolute maximum rating is described as “a limit value that must not be exceeded, even momentarily; or, when standard values are prescribed for two or more quantities, a limit value that must not be reached simultaneously by any two of the quantities”.
Taking an input voltage as an example, the absolute maximum rated value is a voltage that may be input, but apart from whether the device will operate normally, the resulting behaviour will have nothing to do with tolerances, actual performance, or the like. And, exceeding the absolute maximum rated value may possibly cause failure, but this does not mean that the device necessarily will fail for that input voltage. In essence, it is a value that should never under any conditions be exceeded.
This “confirmation that absolute maximum ratings are satisfied” is based on a proper understanding of these matters.
In the previous section, as an example we considered the overall switching operation of the MOSFET R6020ENZ and the waveform data of ID, VDS, VGS, and the power during on-off transitions. Basically, these data items confirmed that the absolute maximum ratings of the R6020ENZ were not exceeded. Below, absolute maximum ratings for the R6020ENZ and checkpoints are given. Try comparing them with the photos presented in the previous section.

In actuality, by checking input and output voltages, load currents, temperatures, and the like in worst-case usage conditions, the requirement that absolute maximum ratings “must not be exceeded, even momentarily” is confirmed.
Next time, we will explain ③ Confirmation that operation is within the SOA (safe operating area).
【Download Documents】 Basics of Si Power Devices
In this handbook, although there are so many types of power devices using Si semiconductors, the basic points are explained, focusing mainly on diodes and transistors for power supply applications. It also introduces the procedure and decision method for transistor selection when designing circuits, as well as application examples that utilize each characteristic and feature.
Transistors
Basic
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Basics of Transistors
- Transistor Fundamentals: Structure, Types, and Operating Principles
- Bipolar Junction Transistor (BJT) Basics: Operation and Applications (NPN & PNP)
- NPN Transistor: Low-Side Switch Fundamentals
- PNP Transistor: High-Side Switch Fundamentals
- What is a Digital Transistor?
- Digital Transistor Selection
- ON Resistance
- Total Gate Charge
- How to select<Selecting Transistors to Ensure Safe Operation>
- Junction Temperature <Calculating Transistor Chip Temperature>
- What is a Load Switch?
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Basics of MOSFETs
- What are MOSFETs? – MOSFET Parasitic Capacitance and Its Temperature Characteristic
- What are MOSFETs? – MOSFET Switching Characteristics and Temperature Characteristics
- What are MOSFETs? – MOSFET Threshold Values, ID-VGS Characteristics, and Temperature Characteristics
- What are MOSFETs? – Super-junction MOSFET
- What are MOSFETs? – Types and Features of High Voltage Super-Junction MOSFET
- What are MOSFETs? – Fast trr SJ-MOSFET:PrestoMOS™
- MOSFET Thermal Resistance and Power Dissipation: Packages Capable of Back-Surface Heat Dissipation
- Introduction
-
Confirming the Suitability of a Transistor in Actual Operation – Introduction
- Confirmation of the Chip Temperature
- Confirmation of Suitability in Actual Operation and Preparations
- Confirmation that Absolute Maximum Ratings are Satisfied
- Confirmation that Operation is within the SOA (Safe Operating Area)
- Confirmation that Operation is within the SOA Derated at the Actual Operating Temperature
- Confirmation that Average Power Consumption is within the Rated Power
- Summary
- Summary
Evaluation
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The Importance of the Recovery Characteristics of Primary-side Switching Elements in LLC Converters -Introduction-
- Basic Configuration of an LLC Converter
- Features of LLC Converter Operation
- Basic Operation of LLC Converters
- Importance of MOSFET Recovery Characteristics for Off-Resonance of LLC Converters
- The Importance of the Recovery Characteristics of Primary-side Switching Elements in LLC Converters ーSummaryー
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The Importance of the Reverse Recovery Characteristics of Switching Elements in Inverter Circuits -Introduction-
- Types of Inverter Circuits and Energization Methods
- Basic Operation of 3-Phase Modulation Inverter Circuits
- Comparison of Losses in a PrestoMOS™ MOSFET and a Standard SJ MOSFET Using Double-Pulse Tests (Actual Measurement Results)
- Comparison of Efficiency of a PrestoMOS™ MOSFET and a Standard SJ MOSFET in a 3-Phase Modulation Inverter Circuit (Simulations)
- The Importance of the Reverse Recovery Characteristics of Switching Elements in Inverter Circuits -Summary-
- Mechanisms of MOSFET Destruction
- About Double-Pulse Tests
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Improving the Power Conversion Efficiency of Phase Shift Full Bridge Circuits – Introduction
- Basic Configuration of a PSFB Circuit
- Basic Operation of PSFB Circuits
- Guidelines Relating to Operation of Switching Elements Under Light Loading
- Guidelines Relating to Operation of Switching Elements Under Heavy Loading
- Evaluation of Efficiency
- Improving the Power Conversion Efficiency of Phase Shift Full Bridge Circuit – Summary –