Transistors｜Evaluation
The Importance of the Reverse Recovery Characteristics of Switching Elements in Inverter Circuits Comparison of Efficiency of a PrestoMOS™ MOSFET and a Standard SJ MOSFET in a 3-Phase Modulation Inverter Circuit (Simulations)
2023.12.27
Points of this article
・Simulations were used to determine the circuit efficiency of a 3-phase modulation inverter circuit and the losses per MOSFET.
・Upon comparing PrestoMOS™ MOSFETs and standard SJ MOSFETs in a 3-phase modulation inverter circuit, the circuit using the PrestoMOS™ MOSFETs, with superior reverse recovery characteristics, was found to have higher efficiency (lower losses).
・In a 3-phase modulation inverter circuit, PrestoMOS™ MOSFETs with their superior reverse recovery characteristics are clearly advantageous in terms of efficiency.
This article focuses on the fourth topic, comparison of the efficiencies of PrestoMOS™ MOSFETs and ordinary SJ MOSFETs in a 3-phase modulation inverter circuits. The efficiencies were compared through simulations.
- ■Types of inverter circuits and energization method
- ■Basic operation of 3-phase modulation inverter circuits
- ■Comparison of losses in a PrestoMOS™ MOSFET and a standard SJ MOSFET using double-pulse tests (actual measurement results)
- ■Comparison of efficiency of a PrestoMOS™ MOSFET and a standard SJ MOSFET in a 3-phase modulation inverter circuit (simulations)
Comparison of Efficiency of a PrestoMOS™ MOSFET and a Standard SJ MOSFET in a 3-Phase Modulation Inverter Circuit (Simulations)
After comparing losses according to the double pulse tests that were initially conducted, the efficiencies of 3-phase modulation inverter circuits, which are the objects of evaluations in this section, were compared. The MOSFETs were the same types as those used in the double pulse tests: the PrestoMOS™ R6030JNx, and the R6030KNx ordinary SJ MOSFET. The efficiencies were compared using simulations. The simulation circuit appears in Fig. 19.
The simulation conditions were set as follows, based on the conditions used for the double-pulse test circuit.
- （1）Gate driving voltage VGS : 0 V to 12 V
- （2）Supply voltage Vin : 280 Vdc
- （3）Inductors LU , LV , LW: 8 mH
- （4）Switching frequency fsw : 5 kHz
- （5） Gate resistor RG(on): Changed with the device (in order to cause the turn-on di/dt to be 100 A/µs)
- ・PrestoMOS™ R6030JNx: 60 Ω（three 180 Ω in parallel)
- ・R6030KNx: 180 Ω
- （6）Gate resistor RG (off): 22 Ω
- （7）Output power POUT : 100 W, 300 W, 500 W, 700 W, 1000 W
Fig. 20 shows the efficiencies according to the simulations. Moreover, Fig. 21 shows the loss per MOSFET in the simulations.
As indicated by the results, the efficiency is higher for the PrestoMOS™ R6030JNx (red lines), and we see that the superior reverse recovery characteristic is effective in raising efficiency. Where losses are concerned, the losses per MOSFET when the output is 1000 W were improved by 0.5 W, so that the losses for all the MOSFETs (six) were reduced by 3 W.
Transistors
Basic
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Basics of Transistors
- Transistor Fundamentals: Structure, Types, and Operating Principles
- Bipolar Junction Transistor (BJT) Basics: Operation and Applications (NPN & PNP)
- NPN Transistor: Low-Side Switch Fundamentals
- PNP Transistor: High-Side Switch Fundamentals
- What is a Digital Transistor?
- Digital Transistor Selection
- ON Resistance
- Total Gate Charge
- How to select＜Selecting Transistors to Ensure Safe Operation＞
- Junction Temperature ＜Calculating Transistor Chip Temperature＞
- What is a Load Switch?
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Basics of MOSFETs
- What are MOSFETs? – MOSFET Parasitic Capacitance and Its Temperature Characteristic
- What are MOSFETs? – MOSFET Switching Characteristics and Temperature Characteristics
- What are MOSFETs? – MOSFET Threshold Values, ID-VGS Characteristics, and Temperature Characteristics
- What are MOSFETs? – Super-junction MOSFET
- What are MOSFETs? – Types and Features of High Voltage Super-Junction MOSFET
- What are MOSFETs? – Fast trr SJ-MOSFET：PrestoMOS™
- MOSFET Thermal Resistance and Power Dissipation: Packages Capable of Back-Surface Heat Dissipation
- Introduction
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Confirming the Suitability of a Transistor in Actual Operation – Introduction
- Confirmation of the Chip Temperature
- Confirmation of Suitability in Actual Operation and Preparations
- Confirmation that Absolute Maximum Ratings are Satisfied
- Confirmation that Operation is within the SOA (Safe Operating Area)
- Confirmation that Operation is within the SOA Derated at the Actual Operating Temperature
- Confirmation that Average Power Consumption is within the Rated Power
- Summary
- Summary
Evaluation
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The Importance of the Recovery Characteristics of Primary-side Switching Elements in LLC Converters －Introduction－
- Basic Configuration of an LLC Converter
- Features of LLC Converter Operation
- Basic Operation of LLC Converters
- Importance of MOSFET Recovery Characteristics for Off-Resonance of LLC Converters
- The Importance of the Recovery Characteristics of Primary-side Switching Elements in LLC Converters ーSummaryー
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The Importance of the Reverse Recovery Characteristics of Switching Elements in Inverter Circuits －Introduction－
- Types of Inverter Circuits and Energization Methods
- Basic Operation of 3-Phase Modulation Inverter Circuits
- Comparison of Losses in a PrestoMOS™ MOSFET and a Standard SJ MOSFET Using Double-Pulse Tests (Actual Measurement Results)
- Comparison of Efficiency of a PrestoMOS™ MOSFET and a Standard SJ MOSFET in a 3-Phase Modulation Inverter Circuit (Simulations)
- The Importance of the Reverse Recovery Characteristics of Switching Elements in Inverter Circuits －Summary－
- Mechanisms of MOSFET Destruction
- About Double-Pulse Tests
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Improving the Power Conversion Efficiency of Phase Shift Full Bridge Circuits – Introduction
- Basic Configuration of a PSFB Circuit
- Basic Operation of PSFB Circuits
- Guidelines Relating to Operation of Switching Elements Under Light Loading
- Guidelines Relating to Operation of Switching Elements Under Heavy Loading
- Evaluation of Efficiency
- Improving the Power Conversion Efficiency of Phase Shift Full Bridge Circuit – Summary –